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LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
FEATURES
1. This specification shall be applied to photocoupler. Model No. LTV-817 as an option. 2. Applicable Models (Business dealing name) * Dual-in-line package : LTV702V-V * Wide lead spacing package : LTV702VM-V * Surface mounting package : LTV702VS-V * Tape and reel packaging : LTV702VSTA1-V 3. The relevant models are the models Approved by VDE according to DIN VDE 0884:1992-06 Approved Model No.: LTV-702V / LTV-702VM / LTV-702VS VDE approved No.: 094722 (According to the specification DIN VDE 0884:1992-06) * Operating isolation voltage VIORM : 700V (Peak) * Transient voltage VTR : 6000V (Peak) * Pollution : 2 (According to VDE 0110-1 : 1997-04) * Clearances distance (Between input and output) : 7.0mm (MIN.) * Creepage distance (Between input and output) : 7.0mm (MIN.) * Isolation thickness between input and output : 0.4mm (MIN.) * Safety limit values Current (Isi) : 400mA (Diode side) Power (Psi) : 700mW (Phototransistor side) Temperature(Tsi) : 175oC In order to keep safety electric isolation of photocoupler, please set the protective circuit to keep within safety limit values when the actual application equipment troubled. * Indication of VDE 0884 approval prints " " on sleeve package.
Part No. : LTV702V ( M, S, STA1 )-V
BNS-OD-C131/A4
Page :
1 of 12
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
OUTLINE DIMENSIONS
LTV702V-V :
LTV702VM-V :
*1. *2. *3. *4.
Year date code. 2-digit work week. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China). Rank shall be or shall not be marked. Page : 2 of 12
Part No. : LTV702V ( M, S, STA1 )-V
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
OUTLINE DIMENSIONS
LTV702VS-V :
*1. *2. *3. *4.
Year date code. 2-digit work week. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China). Rank shall be or shall not be marked.
Part No. : LTV702V ( M, S, STA1 )-V
BNS-OD-C131/A4
Page :
3 of 12
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
TAPING DIMENSIONS
LTV702VSTA1-V :
Description Tape wide Pitch of sprocket holes Distance of compartment Distance of compartment to compartment
Symbol W P0 F P2 P1
Dimensions in mm ( inches ) 16 0.3 ( .63 ) 4 0.1 ( .15 ) 7.5 0.1 ( .295 ) 2 0.1 ( .079 ) 12 0.1 ( .472 )
Part No. : LTV702V ( M, S, STA1 )-V
BNS-OD-C131/A4
Page :
4 of 12
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
ABSOLUTE MAXIMUM RATING
( Ta = 25C )
PARAMETER Forward Current INPUT Reverse Voltage Power Dissipation Collector - Emitter Voltage Emitter - Collector Voltage Collector - Base Voltage OUTPUT Emitter - Base Voltage Collector Current Collector Power Dissipation Total Power Dissipation *1 Isolation Voltage Operating Temperature Storage Temperature *2 Soldering Temperature VEBO IC PC Ptot Viso Topr Tstg Tsol 6 50 160 200 5,000 -55 ~ +100 -55 ~ +150 260 V mA mW mW Vrms C C C SYMBOL IF VR P VCEO VECO VCBO RATING 60 6 105 70 6 70 UNIT mA V mW V V V
*1. AC For 1 Minute, R.H. = 40 ~ 60% Isolation voltage shall be measured using the following method. (1) Short between anode and cathode on the primary side and between collector, emitter and base on the secondary side. (2) The isolation voltage tester with zero-cross circuit shall be used. (3) The waveform of applied voltage shall be a sine wave. *2. For 10 Seconds
Part No. : LTV702V ( M, S, STA1 )-V
BNS-OD-C131/A4
Page :
5 of 12
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
ELECTRICAL - OPTICAL CHARACTERISTICS
( Ta = 25C )
PARAMETER Forward Voltage INPUT Reverse Current Terminal Capacitance Collector Dark Current Collector-Emitter Breakdown Voltage OUTPUT Emitter-Collector Breakdown Voltage Collector-Base Breakdown Voltage Collector Current * Current Transfer Ratio Collector-Emitter Saturation Voltage Isolation Resistance Floating Capacitance Cut-Off Frequency Response Time (Rise) Response Time (Fall) SYMBOL MIN. TYP. MAX. UNIT VF IR Ct ICEO BVCEO -- -- -- -- 70 1.4 -- 30 -- -- 1.7 10 250 50 -- V A pF nA V CONDITIONS IF=60mA VR=6V V=0, f=1KHz VCE=10V, IF=0 IC=0.1mA IF=0 IE=10A IF=0 IC=0.1mA IF=0 IF=10mA VCE=5V IF=10mA IC=2.5mA DC500V 40 ~ 60% R.H. V=0, f=1MHz VCC=5V, IF=10mA RL=75,-3dB VCC=5V, IF=10mA RL=75
BVECO
6
--
--
V
BVCBO IC CTR VCE(sat)
70 4 40 --
-- -- -- 0.25
-- 32 320 0.4
V mA % V pF kHz s s
TRANSFER CHARACTERISTICS
Riso Cf fc tr tf
5x1010 1x1011 -- -- -- -- 0.6 150 2 2
-- 1 -- 7 8
* CTR =
IC x 100% IF
Part No. : LTV702V ( M, S, STA1 )-V
BNS-OD-C131/A4
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LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
RANK TABLE OF CURRENT TRANSFER RATIO CTR
MODEL NO.
RANK MARK A B
CTR ( % ) 40 ~ 80 63 ~ 125 100 ~ 200 160 ~ 320 40 ~ 320
LTV702V-V
C D A or B or C or D or No mark
IF = 10 mA CONDITIONS VCE = 5 V Ta = 25 C
Part No. : LTV702V ( M, S, STA1 )-V
BNS-OD-C131/A4
Page :
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LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
ISOLATION SPECIFICATION ACCORDING TO VDE 0884
Parameter
Class of environmental test Pollution Maximum Operating Isolation Voltage Partial Discharge Test Diagram 1 Voltage (Between Input and Output) Diagram 2 Maximum Over-voltage Safety Maximum Ratings 1) Case Temperature 2) Input Current 3) Electric Power (Output or Total Power Issipation)
Symbol
VIORM
Conditions
DIN IEC68 DIN VDE0110 tp=60s, qc<5pC
Rating
55/100/21 2 700 1050 1313 6000
Unit
VPEAK VPEAK VPEAK VPEAK
Remark
Vpr tp=1s, qc<5pC VINITIAL tINI = 10s
Refer to the Diagram 1, 2
Tsi Isi Psi
IF = 0, Pc = 0 Pc=0 Ta=Tsi
175 400 700 MIN.109 MIN.1011 MIN.1012
o
C
mA mW
Refer to the Figure 1, 3
Isolation Resistance (Test Voltage Between Input and Output : DC500V)
RISO
Ta=Topr(MAX.) Ta=25 oC
Precautions in performing isolation test * Partial discharge test methods shall be the ones according to the specifications of VDE 0884:1992-06 * Please don't carry out isolation test (Viso) over VINITIAL ,This product deteriorates isolation characteristics by partial discharge due to applying high voltage (ex. VINITIAL ). And there is possibility that this product occurs partial discharge in operating isolation voltage (VIORM)
Part No. : LTV702V ( M, S, STA1 )-V
BNS-OD-C131/A4
Page :
8 of 12
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
PARTIAL DISCHARGE TEST METHOD
Method (A) for type testing and random testing. V VINTIAL
Vpr VIORM t1, t2 = 1 to 10s t3, t4 = 1s tp (Partial Discharge Measuring Time)= 60s tb = 62s tini = 10s
t3 t1 tini t2
tp tb
t4
t
Method (B) for routine testing. V Vpr
VIORM
t3, t4 = 0.1s tp (Partial Discharge Measuring Time)= 1s tb = 1.2s
t3
tp tb
t4
t
The partial discharge level shall not exceed 5 pC during the partial discharge measuring time interval tp under the test conditions shown above.
Part No. : LTV702V ( M, S, STA1 )-V
BNS-OD-C131/A4
Page :
9 of 12
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
CHARACTERISTICS CURVES
Fig.1 Forward Current vs. Ambient Temperature
80
Fig.2 Collector Power Dissipation vs. Ambient Temperature
Collector power dissipation Pc (mW)
200 160 150
Forward current IF (mA)
60
40
100
20
50
0 -55 -25
0
25
50
75
100 125
o
0 -55 -25
0
25
50
75
100 125
o
Ambient temperature Ta ( C)
Ambient temperature Ta ( C)
Fig.3 Collector-emitter Saturation Voltage vs. Forward Current
Collector-emitter saturation voltage V (sat) (V)
Fig.4 Forward Current vs. Forward Voltage
500
o
6 5 4 3 2 1 0 0 2.5 5.0 7.5 10.0 12.5 Forward current IF (mA) Ic= 0.5mA 1mA 2mA 3mA 5mA Ta= 25 C
200
Forward current IF (mA)
Ta= 75 C o 50 C
o
100 50 20 10 5 2 1 0 0.5 1.0 1.5 2.0
25oC o 0C o -25 C
2.5
3.0
Forward voltage VF (V)
Fig.5 Current Transfer Ratio vs. Forward Current
200
Current transfer ratio CTR (%)
Fig.6 Collector Current vs. Collector-emitter Voltage
45 Ta= 25 C IF = 30mA 20mA Pc(MAX.)
o
180 160 140 120 100 80 60 40 20 0
VCE= 5V Ta= 25 C
o
40
Collector current Ic (mA)
35 30 25 20 15 10 5 0
R=
100k 500k
10mA 5mA 2mA 0 2 4 6 8 10
0
2
5
10
20
50
Forward current I F(mA)
Collector-emitter voltage VCE(V)
Part No. : LTV702V ( M, S, STA1 )-V
BNS-OD-C131/A4
Page : 10 of 12
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
CHARACTERISTICS CURVES
Fig.7 Relative Current Transfer Ratio vs. Ambient Temperature
150
Relative current transfer ratio (%)
Fig.8 Collector-emitter Saturation Voltage vs. Ambient Temperature
Collector-emitter saturation voltage V (sat) (V)
0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 -55 -25 0 25 50 75
o
IF= 10mA VCE= 5V
100
IF= 10mA IC= 2.5mA
50
0 -55
-25
0
25
50
75
o
100
100
Ambient temperature Ta ( C)
Ambient temperature Ta ( C)
Fig.9 Collector Dark Current vs. Ambient Temperature
10
Collector dark current ICEO(A)
-6
Fig.10 Response Time vs. Load Resistance
10
VCE= 10V
-7
10 10 10 10
-8
Response time ( s)
5
IF= 10mA VCC= 5V Ta= 25 C
o
-9
tr tf 2
-10
10 10 10
-11
1
-12
-13
-30
0
20
40
60
80
o
100
0.5 0.02
0.05
0.1
0.2
0.5
Ambient temperature Ta ( C)
Load resistance RL (k )
Fig.11 Frequency Response
2 0
Voltage gain Av (dB)
Test Circuit for Response Time
Vcc IF = 10mA Vcc= 5V o Ta= 25 C Input RD RL Input Output Output
10% 90%
-2 -4 R = 200 -6 -8 -10 0.5 1 150 75
td tr
ts tf
Test Circuit for Frequency Response
Vcc RD RL Output
2
5 10 20
50 100 200 500
Frequency f (kHz)
Part No. : LTV702V ( M, S, STA1 )-V
BNS-OD-C131/A4
Page : 11 of 12
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
RECOMMENDED FOOT PRINT PATTERNS (MOUNT PAD)
Unit : mm
Part No. : LTV702V ( M, S, STA1 )-V
BNS-OD-C131/A4
Page : 12 of 12

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